Cmos temperature sensor thesis

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Resistor-based Temperature Sensors in CMOS Technology

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High-temperature Bulk CMOS Integrated Circuits for Data Acquisition | Semantic Scholar

Meijer, G. Electrical Engineering, Mathematics and Computer Science. Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to fabricate high-precision bandgap references and temperature sensors in low-cost CMOS technology, the electrical characteristics of substrate bipolar pnp transistors have been investigated over a wide temperature range. The measurement results of the IC VBE, characteristics show that at a moderate current range, a good exponential relation between the base-emitter voltage and the collector current exists. Moreover, the temperature behavior of the base-emitter voltage can be well modeled with the well-known Gummel-Poon model.
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MSc thesis proposals

Skip to main content. Search results. In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. This article presents in-pixel of a CMOS image sensor CIS temperature sensors with improved accuracy in the spatial and the temporal domain.
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