Resistor-based Temperature Sensors in CMOS Technology
High-temperature Bulk CMOS Integrated Circuits for Data Acquisition | Semantic Scholar
Meijer, G. Electrical Engineering, Mathematics and Computer Science. Two main parts have been presented in this thesis: device characterization and circuit. In integrated bandgap references and temperature sensors, the IC VBE, characteristics of bipolar transistors are used to generate the basic signals with high accuracy. To investigate the possibilities to fabricate high-precision bandgap references and temperature sensors in low-cost CMOS technology, the electrical characteristics of substrate bipolar pnp transistors have been investigated over a wide temperature range. The measurement results of the IC VBE, characteristics show that at a moderate current range, a good exponential relation between the base-emitter voltage and the collector current exists. Moreover, the temperature behavior of the base-emitter voltage can be well modeled with the well-known Gummel-Poon model.
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